1. Z. Gu, S. L. Ban, D. D. Jiang, and Y. Qu*, Effects of Two-mode Transverse Optical Phonons in Bulk Wurtzite AlGaN on Electronic Mobility in AlGaN/GaN Quantum Wells. Journal of Applied Physics, 121, 035703 (2017). 2. W. H. Liu, Y. Qu*, S. L. Ban, Electron mobility limited by optical phonons in wurtzite InGaN/GaN core-shell nanowires. Journal of Applied Physics, 122, 115104 (2017.9). 3. W. H. Liu, Y. Qu*, S. L. Ban, Intersubband optical absorption between multi energy levels of electrons in InGaN/GaN spherical core-shell quantum dots. Superlattices and Microtructures 102, 373-381(2017). 4. Y. H. Zan, S. L. Ban*,Y. J. Chai, Y. Qu, Acoustic phonon modes in asymmetric AlxGa1-xN/GaN/AlyGa1-yN quantum wells. Superlattices and Microstructures 102, 64-73 (2017). 5. Z. Gu, Z. N. Zhu, M. M. Wang, Y. Q. Wang, M. S. Wang, Y. Qu, S. L. Ban*, Interband optical absorption in wurtzite MgxZn1−xO/ZnO/MgyZn1−yO asymmetric quantum wells, Superlattices and Microstructures,102, 391-398(2017). 6. 李群,屈媛,班士良*, 缓冲层对量子阱二能级系统中电子子带间跃迁光吸收的影响。《物理学报》, 66(7),077301(2017). 7. Z. X. Xue, Y. Qu*, H. Xie and S. L. Ban, Transfer matrix method solving interface optical phonons in wurtzite core-multishell nanowires of III-nitrides. AIP Advances 6, 125207 (2016). 8. 刘文浩,冯慧敏,杨璐,杨硕,班士良,屈媛*, 低维量子系统中电子态的数值解法。 内蒙古大学学报(自然科学版), 46(4), 383-390 (2015) . 9. W. H. Liu, S. Yang, H. M. Feng, L. Yang, Y. Qu*, S.L. Ban, Effects of ternary mixed crystal and size on intersubband optical absorption in wurtzite InGaN/GaN core–shell nanowires. Superlattices and Microstructures, 83, 521–529 (2015). 10. J. Li, J. Y. Guan, S. F. Zhang, S. L. Ban and Y. Qu*, Effects of ternary mixed crystal and size on optical phonons in wurtzite nitride core-shell nanowires. Journal of Applied Physics, 115, 154305(2014). 11. 屈媛, 宗易昕, 马健, 李冬雪, 班士良. 体横光学声子双模性对纤锌矿AlxGa1-xN量子阱中光学声子的影响。中国科学, 44, 150-161 (2014) . 12. 王志强,屈媛,杨福军,班士良*, 纤锌矿AlN/AlxGa1-xN/AlN量子阱中界面光学声子对电子迁移率的影响。内蒙古大学学报(自然科学版), 44(4), 267-375, (2013). 13. Y. Qu and S. L. Ban, Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well with an InxGa1-xN nanogroove. Journal of Applied Physics 110(1), 013722 (2011). 14. 屈媛,班士良. 纤锌矿AlN/GaN/InN/GaN/AlN量子阱的界面和局域光学声子。内 蒙古大学学报(自然科学版), 41(1), 57-65(2010.1). 15. 屈媛,班士良. 纤锌矿氮化物量子阱中光学声子模的三元混晶效应。物理学 报,59 (7), 4863-4873 (2010.7). 16. Y. Qu and S. L. Ban, Electron mobility in wurtzite nitride quantum wells limited by optical-phonons and its pressure effect. European Physics Journal B, 69, 321–329 (2009.5.8)
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